APT85GR120B2 Microchip Technology
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 170A TMAX
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
Supplier Device Package: T-MAX™
IGBT Type: NPT
Td (on/off) @ 25°C: 43ns/300ns
Switching Energy: 6mJ (on), 3.8mJ (off)
Test Condition: 600V, 85A, 4.3Ohm, 15V
Gate Charge: 660 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 962 W
Description: IGBT NPT 1200V 170A TMAX
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
Supplier Device Package: T-MAX™
IGBT Type: NPT
Td (on/off) @ 25°C: 43ns/300ns
Switching Energy: 6mJ (on), 3.8mJ (off)
Test Condition: 600V, 85A, 4.3Ohm, 15V
Gate Charge: 660 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 962 W
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 37.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT85GR120B2 Microchip Technology
Description: IGBT NPT 1200V 170A TMAX, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A, Supplier Device Package: T-MAX™, IGBT Type: NPT, Td (on/off) @ 25°C: 43ns/300ns, Switching Energy: 6mJ (on), 3.8mJ (off), Test Condition: 600V, 85A, 4.3Ohm, 15V, Gate Charge: 660 nC, Part Status: Active, Current - Collector (Ic) (Max): 170 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 340 A, Power - Max: 962 W.
Weitere Produktangebote APT85GR120B2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APT85GR120B2 | Hersteller : Microchip Technology | Trans IGBT Chip N-CH 1200V 170A 962W 3-Pin(3+Tab) T-MAX Tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
||
APT85GR120B2 | Hersteller : MICROSEMI |
Ultra Fast NPT - IGBT APT85GR120 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-21 Tag (e) |
||
APT85GR120B2 | Hersteller : Microchip Technology | Trans IGBT Chip N-CH 1200V 170A 962000mW 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
||
APT85GR120B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3 Type of transistor: IGBT Technology: NPT Ultra Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 85A Power dissipation: 962W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 340A Mounting: THT Gate charge: 0.49µC Kind of package: tube Turn-on time: 113ns Turn-off time: 445ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
APT85GR120B2 | Hersteller : Microchip Technology | IGBT Modules FG, IGBT, 1200V, 85A, TO-247 T-MAX |
Produkt ist nicht verfügbar |
||
APT85GR120B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3 Type of transistor: IGBT Technology: NPT Ultra Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 85A Power dissipation: 962W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 340A Mounting: THT Gate charge: 0.49µC Kind of package: tube Turn-on time: 113ns Turn-off time: 445ns |
Produkt ist nicht verfügbar |