APTC60DDAM35T3G Microchip Technology
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Technische Details APTC60DDAM35T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A, Case: SP3, On-state resistance: 35mΩ, Topology: boost chopper x2; NTC thermistor, Technology: SJ-MOSFET, Drain current: 54A, Power dissipation: 416W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Gate-source voltage: ±20V, Pulsed drain current: 288A, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC60DDAM35T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTC60DDAM35T3G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A Case: SP3 On-state resistance: 35mΩ Topology: boost chopper x2; NTC thermistor Technology: SJ-MOSFET Drain current: 54A Power dissipation: 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 288A Semiconductor structure: diode/transistor Drain-source voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC60DDAM35T3G | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP3 |
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| APTC60DDAM35T3G | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SP3 |
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| APTC60DDAM35T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A Case: SP3 On-state resistance: 35mΩ Topology: boost chopper x2; NTC thermistor Technology: SJ-MOSFET Drain current: 54A Power dissipation: 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: ±20V Pulsed drain current: 288A Semiconductor structure: diode/transistor Drain-source voltage: 600V |
Produkt ist nicht verfügbar |