APTC60HM70BT3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Power dissipation: 250W
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±20V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 160A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Power dissipation: 250W
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™
Gate-source voltage: ±20V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 160A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Technische Details APTC60HM70BT3G MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A, Power dissipation: 250W, Case: SP3F, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, Drain current: 29A, On-state resistance: 70mΩ, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: CoolMOS™, Gate-source voltage: ±20V, Topology: boost chopper; NTC thermistor, Pulsed drain current: 160A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC60HM70BT3G
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Verfügbarkeit |
Preis ohne MwSt |
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APTC60HM70BT3G | Hersteller : Microsemi Power Products Group | Description: MOSFET 4N-CH 600V 39A SP3 |
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APTC60HM70BT3G | Hersteller : Microchip Technology | Discrete Semiconductor Modules DOR CC3131 |
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APTC60HM70BT3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Power dissipation: 250W Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A On-state resistance: 70mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±20V Topology: boost chopper; NTC thermistor Pulsed drain current: 160A |
Produkt ist nicht verfügbar |