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APTC60SKM35T1G

APTC60SKM35T1G Microsemi


aptc60skm35t1g-rev0.pdf Hersteller: Microsemi
Trans MOSFET N-CH 600V 72A 12-Pin Case SP-1
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Technische Details APTC60SKM35T1G Microsemi

Description: MOSFET N-CH 600V 72A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 5.4mA, Supplier Device Package: SP1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 518 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V.

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APTC60SKM35T1G Hersteller : Microsemi Corporation APTC60SKM35T1G.pdf Description: MOSFET N-CH 600V 72A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 518 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Produkt ist nicht verfügbar