APTC80AM75SCG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Case: SP6C
Power dissipation: 568W
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Pulsed drain current: 232A
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
Electrical mounting: FASTON connectors; screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Case: SP6C
Power dissipation: 568W
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Pulsed drain current: 232A
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
Electrical mounting: FASTON connectors; screw
Anzahl je Verpackung: 1 Stücke
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Technische Details APTC80AM75SCG MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W, Case: SP6C, Power dissipation: 568W, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: CoolMOS™; SiC; SJ-MOSFET, Gate-source voltage: ±30V, Topology: MOSFET half-bridge, Semiconductor structure: SiC diode/transistor, Pulsed drain current: 232A, Drain-source voltage: 800V, Drain current: 43A, On-state resistance: 75mΩ, Electrical mounting: FASTON connectors; screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC80AM75SCG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTC80AM75SCG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 800V 56A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 568W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 56A Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 4mA Supplier Device Package: SP6 |
Produkt ist nicht verfügbar |
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APTC80AM75SCG | Hersteller : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP6C |
Produkt ist nicht verfügbar |
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APTC80AM75SCG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W Case: SP6C Power dissipation: 568W Mechanical mounting: screw Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge Semiconductor structure: SiC diode/transistor Pulsed drain current: 232A Drain-source voltage: 800V Drain current: 43A On-state resistance: 75mΩ Electrical mounting: FASTON connectors; screw |
Produkt ist nicht verfügbar |