APTC80AM75SCG MICROCHIP (MICROSEMI)


7366-aptc80am75scg-datasheet Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Case: SP6C
Power dissipation: 568W
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Pulsed drain current: 232A
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
Electrical mounting: FASTON connectors; screw
Anzahl je Verpackung: 1 Stücke
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Technische Details APTC80AM75SCG MICROCHIP (MICROSEMI)

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W, Case: SP6C, Power dissipation: 568W, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: CoolMOS™; SiC; SJ-MOSFET, Gate-source voltage: ±30V, Topology: MOSFET half-bridge, Semiconductor structure: SiC diode/transistor, Pulsed drain current: 232A, Drain-source voltage: 800V, Drain current: 43A, On-state resistance: 75mΩ, Electrical mounting: FASTON connectors; screw, Anzahl je Verpackung: 1 Stücke.

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APTC80AM75SCG Hersteller : Microchip Technology 7366-aptc80am75scg-datasheet Description: MOSFET 2N-CH 800V 56A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 568W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 56A
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Supplier Device Package: SP6
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APTC80AM75SCG Hersteller : Microchip Technology mppgs02373_1-2275373.pdf Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP6C
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APTC80AM75SCG Hersteller : MICROCHIP (MICROSEMI) 7366-aptc80am75scg-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Case: SP6C
Power dissipation: 568W
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Semiconductor structure: SiC diode/transistor
Pulsed drain current: 232A
Drain-source voltage: 800V
Drain current: 43A
On-state resistance: 75mΩ
Electrical mounting: FASTON connectors; screw
Produkt ist nicht verfügbar