APTC80H15T1G MICROCHIP (MICROSEMI)


7372-aptc80h15t1g-rev1-pdf Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP1
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
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Technische Details APTC80H15T1G MICROCHIP (MICROSEMI)

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Drain current: 21A, Drain-source voltage: 800V, Semiconductor structure: transistor/transistor, Case: SP1, Type of module: MOSFET transistor, Technology: CoolMOS™; SJ-MOSFET, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, On-state resistance: 0.15Ω, Pulsed drain current: 110A, Power dissipation: 277W, Anzahl je Verpackung: 1 Stücke.

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APTC80H15T1G APTC80H15T1G Hersteller : Microchip Technology 3087372-aptc80h15t1g-rev1-pdf.pdf Trans MOSFET N-CH 800V 28A 12-Pin Case SP-1 Tube
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APTC80H15T1G Hersteller : Microchip Technology 7372-aptc80h15t1g-rev1-pdf Description: MOSFET 4N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
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APTC80H15T1G Hersteller : Microchip Technology mppgs02160_1-2275457.pdf Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SP1
Produkt ist nicht verfügbar
APTC80H15T1G Hersteller : MICROCHIP (MICROSEMI) 7372-aptc80h15t1g-rev1-pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP1
Type of module: MOSFET transistor
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
Produkt ist nicht verfügbar