APTC80H29T1G Microsemi Corporation

Description: MOSFET 4N-CH 800V 15A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 156W, Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 15A, Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V, Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: SP1, Part Status: Obsolete.