APTCV50H60T3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W, Type of module: MOSFET/IGBT transistor, Semiconductor structure: transistor/transistor, Topology: H-bridge; NTC thermistor, Collector current: 50A, Case: SP3, Electrical mounting: Press-in PCB, Power dissipation: 290W, Technology: Field Stop; SJ-MOSFET; Trench, Mechanical mounting: screw, Gate-source voltage: ±20V, On-state resistance: 45mΩ, Pulsed drain current: 130A, Drain current: 38A, Drain-source voltage: 600V, Anzahl je Verpackung: 1 Stücke.