APTCV60HM70BT3G Microsemi Corporation
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 50A 250W SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Description: IGBT MODULE 600V 50A 250W SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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Technische Details APTCV60HM70BT3G Microsemi Corporation
Description: IGBT MODULE 600V 50A 250W SP3, Packaging: Tray, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Boost Chopper, Full Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.