Produkte > MICROSEMI CORPORATION > APTGF50DDA120T3G
APTGF50DDA120T3G

APTGF50DDA120T3G Microsemi Corporation


APTGF50DDA120T3G.pdf Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details APTGF50DDA120T3G Microsemi Corporation

Description: IGBT MODULE 1200V 70A 312W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual Boost Chopper, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: NPT, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 312 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V.