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APTGF90DH60T3G MICROSEMI


APTGF90DH60T3Gf.pdf Hersteller: MICROSEMI
SP3/Asymmetrical - Bridge NPT IGBT Power Module APTGF90
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Technische Details APTGF90DH60T3G MICROSEMI

Description: IGBT MODULE 600V 110A 416W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: NPT, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 416 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V.

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APTGF90DH60T3G APTGF90DH60T3G Hersteller : Microsemi Corporation APTGF90DH60T3Gf.pdf Description: IGBT MODULE 600V 110A 416W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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