APTGLQ200H120G Microchip Technology
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Technische Details APTGLQ200H120G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C, Topology: H-bridge, Technology: Field Stop; Trench, Case: SP6C, Application: motors, Collector current: 200A, Pulsed collector current: 700A, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Anzahl je Verpackung: 4 Stücke.
Weitere Produktangebote APTGLQ200H120G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGLQ200H120G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Topology: H-bridge Technology: Field Stop; Trench Case: SP6C Application: motors Collector current: 200A Pulsed collector current: 700A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 4 Stücke |
Produkt ist nicht verfügbar |
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APTGLQ200H120G | Hersteller : Microsemi Corporation |
Description: PWR MOD IGBT4 1200V 350A SP6 |
Produkt ist nicht verfügbar |
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| APTGLQ200H120G | Hersteller : Microchip / Microsemi |
IGBT Modules CC6228 |
Produkt ist nicht verfügbar |
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| APTGLQ200H120G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Topology: H-bridge Technology: Field Stop; Trench Case: SP6C Application: motors Collector current: 200A Pulsed collector current: 700A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |