APTGLQ200H65G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 650V; SP6C
Topology: H-bridge
Technology: Field Stop; Trench
Case: SP6C
Application: motors
Collector current: 200A
Pulsed collector current: 540A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 5 Stücke
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Technische Details APTGLQ200H65G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 650V 270A 680W SP6, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 270 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 680 W, Current - Collector Cutoff (Max): 75 µA, Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V.
Weitere Produktangebote APTGLQ200H65G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| APTGLQ200H65G | Hersteller : Microchip Technology |
Description: IGBT MODULE 650V 270A 680W SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 270 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 680 W Current - Collector Cutoff (Max): 75 µA Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGLQ200H65G | Hersteller : Microchip / Microsemi |
IGBT Modules DOR HOLD CC6254 |
Produkt ist nicht verfügbar |
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| APTGLQ200H65G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 650V; SP6C Topology: H-bridge Technology: Field Stop; Trench Case: SP6C Application: motors Collector current: 200A Pulsed collector current: 540A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |