APTGLQ50DDA65T3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor
Topology: boost chopper x2; NTC thermistor
Technology: Field Stop; Trench
Case: SP3F
Application: motors
Collector current: 50A
Pulsed collector current: 140A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 18 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor
Topology: boost chopper x2; NTC thermistor
Technology: Field Stop; Trench
Case: SP3F
Application: motors
Collector current: 50A
Pulsed collector current: 140A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 18 Stücke
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Technische Details APTGLQ50DDA65T3G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor, Topology: boost chopper x2; NTC thermistor, Technology: Field Stop; Trench, Case: SP3F, Application: motors, Collector current: 50A, Pulsed collector current: 140A, Gate-emitter voltage: ±20V, Semiconductor structure: diode/transistor, Max. off-state voltage: 650V, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Anzahl je Verpackung: 18 Stücke.
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Verfügbarkeit |
Preis ohne MwSt |
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APTGLQ50DDA65T3G | Hersteller : Microchip Technology | Description: IGBT MODULE 650V 70A 175W |
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APTGLQ50DDA65T3G | Hersteller : Microchip Technology | IGBT Modules DOR CC3213 |
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APTGLQ50DDA65T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor Topology: boost chopper x2; NTC thermistor Technology: Field Stop; Trench Case: SP3F Application: motors Collector current: 50A Pulsed collector current: 140A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |