APTGLQ50TL65T3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 50A; SP3F; screw
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Field Stop; Trench
Case: SP3F
Application: photovoltaics
Collector current: 50A
Pulsed collector current: 140A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 14 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 50A; SP3F; screw
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Field Stop; Trench
Case: SP3F
Application: photovoltaics
Collector current: 50A
Pulsed collector current: 140A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 14 Stücke
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Technische Details APTGLQ50TL65T3G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 650V 70A 175W SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3F, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 175 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V.
Weitere Produktangebote APTGLQ50TL65T3G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGLQ50TL65T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 650V 70A 175W SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3F IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 175 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGLQ50TL65T3G | Hersteller : Microchip Technology | IGBT Modules DOR HOLD CC3212 |
Produkt ist nicht verfügbar |
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APTGLQ50TL65T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 50A; SP3F; screw Topology: NTC thermistor; three-level inverter; single-phase Technology: Field Stop; Trench Case: SP3F Application: photovoltaics Collector current: 50A Pulsed collector current: 140A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |