APTGT100A60T1G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 200A
Application: motors
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: SP1
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: IGBT half-bridge; NTC thermistor
Anzahl je Verpackung: 17 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 200A
Application: motors
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: SP1
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: IGBT half-bridge; NTC thermistor
Anzahl je Verpackung: 17 Stücke
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Technische Details APTGT100A60T1G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 600V 150A 340W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 340 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V.
Weitere Produktangebote APTGT100A60T1G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGT100A60T1G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 150A 340W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGT100A60T1G | Hersteller : Microchip Technology | IGBT Modules DOR CC8013 |
Produkt ist nicht verfügbar |
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APTGT100A60T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 200A Application: motors Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: SP1 Gate-emitter voltage: ±20V Collector current: 100A Topology: IGBT half-bridge; NTC thermistor |
Produkt ist nicht verfügbar |