APTGT100H120G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 5 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 5 Stücke
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Technische Details APTGT100H120G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: H-bridge, Max. off-state voltage: 1.2kV, Collector current: 100A, Case: SP6C, Application: motors, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Technology: Field Stop; Trench, Mechanical mounting: screw, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote APTGT100H120G
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Verfügbarkeit |
Preis ohne MwSt |
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APTGT100H120G | Hersteller : Microchip Technology | Description: IGBT MODULE 1200V 140A 480W SP6 |
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APTGT100H120G | Hersteller : Microchip / Microsemi | IGBT Modules DOR CC6073 |
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APTGT100H120G | Hersteller : Microchip Technology | IGBT Modules PM-IGBT-TFS-SP6C |
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APTGT100H120G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |