Technische Details APTGT100H60T3G Microchip / Microsemi
Description: IGBT MODULE 600V 150A 340W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 340 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V.
Weitere Produktangebote APTGT100H60T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGT100H60T3G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 200A Application: motors Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: SP3F Gate-emitter voltage: ±20V Collector current: 100A Topology: H-bridge; NTC thermistor Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
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APTGT100H60T3G | Hersteller : Microchip Technology |
Trans IGBT Module N-CH 600V 150A 340mW 32-Pin Case SP-3 Tube |
Produkt ist nicht verfügbar |
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| APTGT100H60T3G | Hersteller : MICROSEMI |
Full - Bridge Trench + Field Stop IGBT3 Power Module APTGT100 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTGT100H60T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 150A 340W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT100H60T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 200A Application: motors Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: SP3F Gate-emitter voltage: ±20V Collector current: 100A Topology: H-bridge; NTC thermistor |
Produkt ist nicht verfügbar |