APTGT150A120G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 6 Stücke
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Technische Details APTGT150A120G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 150A, Case: SP6C, Application: motors, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 350A, Technology: Field Stop; Trench, Mechanical mounting: screw, Anzahl je Verpackung: 6 Stücke.
Weitere Produktangebote APTGT150A120G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGT150A120G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 220A 690W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT150A120G | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
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| APTGT150A120G | Hersteller : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP6C |
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| APTGT150A120G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 150A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 350A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |