APTGT150A120TG Microchip Technology
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Technische Details APTGT150A120TG Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; NTC thermistor, Max. off-state voltage: 1.2kV, Collector current: 150A, Case: SP4, Electrical mounting: FASTON connectors; soldering, Gate-emitter voltage: ±20V, Pulsed collector current: 350A, Power dissipation: 690W, Technology: Field Stop, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTGT150A120TG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| APTGT150A120TG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 350A Power dissipation: 690W Technology: Field Stop Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| APTGT150A120TG | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 220A 690W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V |
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| APTGT150A120TG | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
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| APTGT150A120TG | Hersteller : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP4 |
Produkt ist nicht verfügbar |
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| APTGT150A120TG | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 150A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 350A Power dissipation: 690W Technology: Field Stop Mechanical mounting: screw |
Produkt ist nicht verfügbar |