APTGT150TL60G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 150A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 0.6kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: three-level inverter; single-phase
Anzahl je Verpackung: 6 Stücke
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Technische Details APTGT150TL60G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 150A; SP6C; screw, Application: photovoltaics, Technology: Field Stop; Trench, Mechanical mounting: screw, Pulsed collector current: 300A, Max. off-state voltage: 0.6kV, Electrical mounting: FASTON connectors; screw, Type of module: IGBT, Semiconductor structure: diode/transistor, Case: SP6C, Gate-emitter voltage: ±20V, Collector current: 150A, Topology: three-level inverter; single-phase, Anzahl je Verpackung: 6 Stücke.
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APTGT150TL60G | Hersteller : Microsemi Power Products Group |
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| APTGT150TL60G | Hersteller : Microchip / Microsemi |
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| APTGT150TL60G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 150A; SP6C; screw Application: photovoltaics Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 300A Max. off-state voltage: 0.6kV Electrical mounting: FASTON connectors; screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 150A Topology: three-level inverter; single-phase |
Produkt ist nicht verfügbar |