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APTGT200SK120D3G Microsemi Corporation


index.php?option=com_docman&task=doc_download&gid=14813 Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 300A 1050W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: D3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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Technische Details APTGT200SK120D3G Microsemi Corporation

Description: IGBT MODULE 1200V 300A 1050W D3, Packaging: Bulk, Package / Case: D-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: D3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1050 W, Current - Collector Cutoff (Max): 6 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.