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APTGT20A60T1G

APTGT20A60T1G Microsemi


aptgt20a60t1g-rev0.pdf Hersteller: Microsemi
Trans IGBT Module N-CH 600V 32A 62000mW 12-Pin Case SP-1
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Technische Details APTGT20A60T1G Microsemi

Description: IGBT MODULE 600V 32A 62W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Part Status: Obsolete, Current - Collector (Ic) (Max): 32 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 62 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V.

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APTGT20A60T1G Hersteller : Microsemi Corporation APTGT20A60T1G.pdf Description: IGBT MODULE 600V 32A 62W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Produkt ist nicht verfügbar