APTGT20TL601G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 20A; SP1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Collector current: 20A
Case: SP1
Application: photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 19 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 20A; SP1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: three-level inverter; single-phase
Max. off-state voltage: 0.6kV
Collector current: 20A
Case: SP1
Application: photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 19 Stücke
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Technische Details APTGT20TL601G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 600V 32A 62W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, NTC Thermistor: No, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 32 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 62 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V.
Weitere Produktangebote APTGT20TL601G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGT20TL601G | Hersteller : Microchip Technology | Trans IGBT Module N-CH 600V 32A 62mW 12-Pin Case SP-1 Tube |
Produkt ist nicht verfügbar |
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APTGT20TL601G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 32A 62W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A NTC Thermistor: No Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 62 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V |
Produkt ist nicht verfügbar |
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APTGT20TL601G | Hersteller : Microchip Technology | IGBT Modules PM-IGBT-TFS-SP1 |
Produkt ist nicht verfügbar |
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APTGT20TL601G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 20A; SP1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 20A Case: SP1 Application: photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 40A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |