APTGT225DU170G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 225A
Case: SP6
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 1.25kW
Technology: Field Stop
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 225A
Case: SP6
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 1.25kW
Technology: Field Stop
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details APTGT225DU170G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1700V 340A 1250W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 340 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 20 nF @ 25 V.
Weitere Produktangebote APTGT225DU170G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGT225DU170G | Hersteller : MICROSEMI |
SP6C/TRENCH IGBT Power Module APTGT225 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTGT225DU170G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1700V 340A 1250W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1250 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGT225DU170G | Hersteller : Microchip / Microsemi | IGBT Modules CC6207 |
Produkt ist nicht verfügbar |
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APTGT225DU170G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 225A Case: SP6 Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Power dissipation: 1.25kW Technology: Field Stop Mechanical mounting: screw |
Produkt ist nicht verfügbar |