APTGT30TL601G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 60A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP1
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: three-level inverter; single-phase
Anzahl je Verpackung: 18 Stücke
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Technische Details APTGT30TL601G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw, Application: photovoltaics, Technology: Field Stop; Trench, Mechanical mounting: screw, Pulsed collector current: 60A, Max. off-state voltage: 0.6kV, Electrical mounting: Press-in PCB, Type of module: IGBT, Semiconductor structure: diode/transistor, Case: SP1, Gate-emitter voltage: ±20V, Collector current: 30A, Topology: three-level inverter; single-phase, Anzahl je Verpackung: 18 Stücke.
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Verfügbarkeit |
Preis ohne MwSt |
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| APTGT30TL601G | Hersteller : Microsemi Power Products Group |
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| APTGT30TL601G | Hersteller : Microchip Technology |
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| APTGT30TL601G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw Application: photovoltaics Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 60A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: SP1 Gate-emitter voltage: ±20V Collector current: 30A Topology: three-level inverter; single-phase |
Produkt ist nicht verfügbar |