Technische Details APTGT35A120D1G APT
Description: IGBT MODULE 1200V 55A 205W D1, Packaging: Bulk, Package / Case: D1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, NTC Thermistor: No, Supplier Device Package: D1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 205 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V.
Weitere Produktangebote APTGT35A120D1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGT35A120D1G | Hersteller : Microsemi Corporation |
Description: IGBT MODULE 1200V 55A 205W D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A NTC Thermistor: No Supplier Device Package: D1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 205 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
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