APTGT35A120T1G Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTGT35A120T1G Microchip Technology
Description: IGBT MODULE 1200V 55A 208W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V.
Weitere Produktangebote APTGT35A120T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGT35A120T1G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 18 Stücke |
Produkt ist nicht verfügbar |
||
| APTGT35A120T1G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 55A 208W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 208 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
Produkt ist nicht verfügbar |
||
| APTGT35A120T1G | Hersteller : Microchip Technology |
IGBT Modules Trench Field Stop 1200V 55A 208W |
Produkt ist nicht verfügbar |
||
| APTGT35A120T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 35A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |