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APTGT50A170T1G MICROCHIP (MICROSEMI)


7883-aptgt50a170t1g-datasheet Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Application: motors; motors
Mechanical mounting: screw; screw
Electrical mounting: Press-in PCB; Press-in PCB
Type of module: IGBT; IGBT
Pulsed collector current: 100A; 100A
Collector current: 50A; 50A
Technology: Field Stop; Trench; Field Stop; Trench
Gate-emitter voltage: ±20V; ±20V
Semiconductor structure: transistor/transistor; transistor/transistor
Topology: IGBT half-bridge; NTC thermistor; IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV; 1.7kV
Case: SP1; SP1
Anzahl je Verpackung: 13 Stücke
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Technische Details APTGT50A170T1G MICROCHIP (MICROSEMI)

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A, Application: motors; motors, Mechanical mounting: screw; screw, Electrical mounting: Press-in PCB; Press-in PCB, Type of module: IGBT; IGBT, Pulsed collector current: 100A; 100A, Collector current: 50A; 50A, Technology: Field Stop; Trench; Field Stop; Trench, Gate-emitter voltage: ±20V; ±20V, Semiconductor structure: transistor/transistor; transistor/transistor, Topology: IGBT half-bridge; NTC thermistor; IGBT half-bridge; NTC thermistor, Max. off-state voltage: 1.7kV; 1.7kV, Case: SP1; SP1, Anzahl je Verpackung: 13 Stücke.

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APTGT50A170T1G Hersteller : Microchip Technology 7883-aptgt50a170t1g-datasheet Description: IGBT MODULE 1700V 75A 312W SP1
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APTGT50A170T1G APTGT50A170T1G Hersteller : Microchip Technology APTGT50A170T1G_Rev1-3107048.pdf IGBT Modules DOR CC8081
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APTGT50A170T1G Hersteller : MICROCHIP (MICROSEMI) 7883-aptgt50a170t1g-datasheet Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Application: motors; motors
Mechanical mounting: screw; screw
Electrical mounting: Press-in PCB; Press-in PCB
Type of module: IGBT; IGBT
Pulsed collector current: 100A; 100A
Collector current: 50A; 50A
Technology: Field Stop; Trench; Field Stop; Trench
Gate-emitter voltage: ±20V; ±20V
Semiconductor structure: transistor/transistor; transistor/transistor
Topology: IGBT half-bridge; NTC thermistor; IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV; 1.7kV
Case: SP1; SP1
Produkt ist nicht verfügbar