APTGT50DH120TG Microchip Technology
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Technische Details APTGT50DH120TG Microchip Technology
Description: IGBT MODULE 1200V 75A 277W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 277 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V.
Weitere Produktangebote APTGT50DH120TG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTGT50DH120TG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 11 Stücke |
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APTGT50DH120TG | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 75A 277W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 277 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT50DH120TG | Hersteller : Microchip Technology |
IGBT Modules DOR CC4090 |
Produkt ist nicht verfügbar |
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| APTGT50DH120TG | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |