APTGT50H60RT3G Microchip Technology
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Technische Details APTGT50H60RT3G Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Single Phase Bridge Rectifier, Configuration: Full Bridge Inverter, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Weitere Produktangebote APTGT50H60RT3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTGT50H60RT3G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; single-phase diode bridge; SP3F Type of module: IGBT Semiconductor structure: diode/transistor Topology: H-bridge; NTC thermistor; single-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 50A Case: SP3F Application: photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 14 Stücke |
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APTGT50H60RT3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Single Phase Bridge Rectifier Configuration: Full Bridge Inverter Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT50H60RT3G | Hersteller : Microchip Technology |
IGBT Modules DOR CC3126 |
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| APTGT50H60RT3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; single-phase diode bridge; SP3F Type of module: IGBT Semiconductor structure: diode/transistor Topology: H-bridge; NTC thermistor; single-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 50A Case: SP3F Application: photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |