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APTGT50SK170T1G

APTGT50SK170T1G Microchip Technology


1277910-aptgt50sk170t1g-rev1-pdf.pdf Hersteller: Microchip Technology
Trans IGBT Module N-CH 1700V 75A 312000mW 12-Pin Case SP-1 Tube
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Technische Details APTGT50SK170T1G Microchip Technology

Description: IGBT MODULE 1700V 75A 312W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 312 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V.

Weitere Produktangebote APTGT50SK170T1G

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APTGT50SK170T1G Hersteller : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Case: SP1
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor
Max. off-state voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Anzahl je Verpackung: 17 Stücke
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APTGT50SK170T1G Hersteller : MICROSEMI High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf SP1/TRENCH IGBT Power Module APTGT50
Anzahl je Verpackung: 1 Stücke
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APTGT50SK170T1G APTGT50SK170T1G Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1700V 75A 312W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Produkt ist nicht verfügbar
APTGT50SK170T1G APTGT50SK170T1G Hersteller : Microchip Technology APTGT50SK170T1G_Rev1-3106940.pdf IGBT Modules PM-IGBT-TFS-SP1
Produkt ist nicht verfügbar
APTGT50SK170T1G Hersteller : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper,NTC thermistor
Case: SP1
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor
Max. off-state voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Produkt ist nicht verfügbar