auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 239.9 EUR |
100+ | 178.2 EUR |
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Technische Details APTGT50X60T3G Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Weitere Produktangebote APTGT50X60T3G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGT50X60T3G | Hersteller : Microchip Technology | Trans IGBT Module N-CH 600V 80A 176000mW 32-Pin Case SP-3 Tube |
Produkt ist nicht verfügbar |
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APTGT50X60T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 100A Max. off-state voltage: 600V Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: SP3F Gate-emitter voltage: ±20V Collector current: 50A Topology: IGBT three-phase bridge; NTC thermistor Anzahl je Verpackung: 13 Stücke |
Produkt ist nicht verfügbar |
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APTGT50X60T3G | Hersteller : MICROSEMI |
SP3POWER MODULE - IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTGT50X60T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGT50X60T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 100A Max. off-state voltage: 600V Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: SP3F Gate-emitter voltage: ±20V Collector current: 50A Topology: IGBT three-phase bridge; NTC thermistor |
Produkt ist nicht verfügbar |