APTGTQ100DDA65T3G MICROCHIP (MICROSEMI)
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Technische Details APTGTQ100DDA65T3G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 650V 100A 250W SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual Boost Chopper, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP3F, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6 nF @ 25 V.
Weitere Produktangebote APTGTQ100DDA65T3G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGTQ100DDA65T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 650V 100A 250W SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP3F Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGTQ100DDA65T3G | Hersteller : Microchip Technology | IGBT Modules CC3202 |
Produkt ist nicht verfügbar |