APTGTQ200A65T3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 120A
Case: SP3F
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details APTGTQ200A65T3G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 650V 200A 483W SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: SP3F, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 483 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 12 nF @ 25 V.
Weitere Produktangebote APTGTQ200A65T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTGTQ200A65T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 650V 200A 483W SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP3F Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 483 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 12 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGTQ200A65T3G | Hersteller : Microchip Technology |
IGBT Modules CC3201 |
Produkt ist nicht verfügbar |
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| APTGTQ200A65T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 120A Case: SP3F Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |