APTM100A13DG Microchip Technology
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Technische Details APTM100A13DG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Drain current: 49A, Drain-source voltage: 1kV, Electrical mounting: FASTON connectors; screw, Gate-source voltage: ±30V, Semiconductor structure: diode/transistor, Case: SP6C, On-state resistance: 156mΩ, Topology: MOSFET half-bridge + serial diodes, Pulsed drain current: 240A, Power dissipation: 1.25kW, Technology: POWER MOS 7®, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100A13DG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM100A13DG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 49A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 156mΩ Topology: MOSFET half-bridge + serial diodes Pulsed drain current: 240A Power dissipation: 1.25kW Technology: POWER MOS 7® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM100A13DG | Hersteller : Microsemi Corporation | Description: MOSFET 2N-CH 1000V 65A SP6 |
Produkt ist nicht verfügbar |
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APTM100A13DG | Hersteller : Microchip / Microsemi | Discrete Semiconductor Modules CC6036 |
Produkt ist nicht verfügbar |
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APTM100A13DG | Hersteller : Microchip Technology | Discrete Semiconductor Modules CC6036 |
Produkt ist nicht verfügbar |
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APTM100A13DG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 49A; SP6C; FASTON connectors,screw Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 49A Drain-source voltage: 1kV Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP6C On-state resistance: 156mΩ Topology: MOSFET half-bridge + serial diodes Pulsed drain current: 240A Power dissipation: 1.25kW Technology: POWER MOS 7® |
Produkt ist nicht verfügbar |