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APTM100H35FTG

APTM100H35FTG Microchip Technology


13158011-aptm100h35ftg-rev1-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 1KV 22A 20-Pin Case SP-4 Tube
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Technische Details APTM100H35FTG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Drain current: 17A, Drain-source voltage: 1kV, Electrical mounting: FASTON connectors; screw, Gate-source voltage: ±30V, Semiconductor structure: transistor/transistor, Case: SP4, On-state resistance: 0.42Ω, Topology: H-bridge; NTC thermistor, Pulsed drain current: 88A, Power dissipation: 390W, Technology: FREDFET; POWER MOS 7®, Anzahl je Verpackung: 1 Stücke.

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APTM100H35FTG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8011 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Anzahl je Verpackung: 1 Stücke
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APTM100H35FTG Hersteller : Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=8011 Description: MOSFET 4N-CH 1000V 22A SP4
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APTM100H35FTG Hersteller : Microchip / Microsemi index.php?option=com_docman&task=doc_download&gid=8011 Discrete Semiconductor Modules DOR CC4103
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APTM100H35FTG Hersteller : Microchip Technology index.php?option=com_docman&task=doc_download&gid=8011 Discrete Semiconductor Modules DOR CC4103
Produkt ist nicht verfügbar
APTM100H35FTG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8011 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 17A; SP4; Idm: 88A; 390W; screw
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 17A
Drain-source voltage: 1kV
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP4
On-state resistance: 0.42Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 88A
Power dissipation: 390W
Technology: FREDFET; POWER MOS 7®
Produkt ist nicht verfügbar