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APTM100H45FT3G

APTM100H45FT3G Microchip Technology


6818013-aptm100h45ft3g-rev3-datasheet.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 1KV 18A 32-Pin Case SP-3 Tube
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Technische Details APTM100H45FT3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W, Type of module: MOSFET transistor, Mechanical mounting: screw, Drain current: 14A, Drain-source voltage: 1kV, Electrical mounting: Press-in PCB, Gate-source voltage: ±30V, Semiconductor structure: transistor/transistor, Case: SP3, On-state resistance: 0.54Ω, Topology: H-bridge; NTC thermistor, Pulsed drain current: 72A, Power dissipation: 357W, Technology: FREDFET; POWER MOS 7®, Anzahl je Verpackung: 1 Stücke.

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APTM100H45FT3G Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8013 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.54Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Anzahl je Verpackung: 1 Stücke
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APTM100H45FT3G Hersteller : Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=8013 Description: MOSFET 4N-CH 1000V 18A SP3
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APTM100H45FT3G Hersteller : Microchip / Microsemi index.php?option=com_docman&task=doc_download&gid=8013 Discrete Semiconductor Modules DOR CC3030
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APTM100H45FT3G Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8013 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W
Type of module: MOSFET transistor
Mechanical mounting: screw
Drain current: 14A
Drain-source voltage: 1kV
Electrical mounting: Press-in PCB
Gate-source voltage: ±30V
Semiconductor structure: transistor/transistor
Case: SP3
On-state resistance: 0.54Ω
Topology: H-bridge; NTC thermistor
Pulsed drain current: 72A
Power dissipation: 357W
Technology: FREDFET; POWER MOS 7®
Produkt ist nicht verfügbar