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APTM100H45SCTG

APTM100H45SCTG Microchip Technology


index.php?option=com_docman&task=doc_download&gid=8014 Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 1 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+524.86 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details APTM100H45SCTG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw, Type of module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1kV, Drain current: 14A, Case: SP4, Topology: H bridge + parrallel diodes; NTC thermistor, Electrical mounting: FASTON connectors; screw, On-state resistance: 0.54Ω, Pulsed drain current: 72A, Power dissipation: 357W, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote APTM100H45SCTG nach Preis ab 535.39 EUR bis 535.39 EUR

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APTM100H45SCTG Hersteller : Microchip Technology index.php?option=com_docman&task=doc_download&gid=8014 Discrete Semiconductor Modules PM-MOSFET-7-SBD-SP4
auf Bestellung 6 Stücke:
Lieferzeit 308-322 Tag (e)
Anzahl Preis ohne MwSt
1+535.39 EUR
APTM100H45SCTG Hersteller : Microchip Technology 13178014-aptm100h45sctg-rev2-pdf.pdf Trans MOSFET N-CH 1KV 18A 20-Pin Case SP-4 Tube
Produkt ist nicht verfügbar
APTM100H45SCTG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8014 Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
Case: SP4
Topology: H bridge + parrallel diodes; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 0.54Ω
Pulsed drain current: 72A
Power dissipation: 357W
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM100H45SCTG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8014 Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1kV
Drain current: 14A
Case: SP4
Topology: H bridge + parrallel diodes; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 0.54Ω
Pulsed drain current: 72A
Power dissipation: 357W
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar