APTM10DHM09T3G MICROSEMI
Hersteller: MICROSEMI
SP3/Asymmetrical - Bridge MOSFET Power Module APTM10DHM09
Anzahl je Verpackung: 1 Stücke
SP3/Asymmetrical - Bridge MOSFET Power Module APTM10DHM09
Anzahl je Verpackung: 1 Stücke
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Technische Details APTM10DHM09T3G MICROSEMI
Description: MOSFET 2N-CH 100V 139A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 139A, Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: SP3.
Weitere Produktangebote APTM10DHM09T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTM10DHM09T3G | Hersteller : Microsemi Corporation |
Description: MOSFET 2N-CH 100V 139A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SP3 |
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