APTM10DHM09T3G

APTM10DHM09T3G

Hersteller: MICROSEMI
SP3/Asymmetrical - Bridge MOSFET Power Module APTM10DHM09
Anzahl je Verpackung: 1 Stücke

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Technische Details APTM10DHM09T3G

Description: MOSFET 2N-CH 100V 139A SP3, Manufacturer: Microsemi Corporation, Packaging: Bulk, Part Status: Obsolete, FET Type: 2 N-Channel (Dual) Asymmetrical, FET Feature: Standard, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 139A, Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V, Power - Max: 390W, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP3, Supplier Device Package: SP3.

Preis APTM10DHM09T3G ab 0 EUR bis 0 EUR

APTM10DHM09T3G
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 139A SP3
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen