APTM10DSKM09T3G Microchip Technology
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Technische Details APTM10DSKM09T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A, Electrical mounting: Press-in PCB, Case: SP3, Mechanical mounting: screw, Semiconductor structure: diode/transistor, Drain current: 100A, Technology: POWER MOS 5®, Gate-source voltage: ±30V, Topology: buck chopper x2; NTC thermistor, Pulsed drain current: 430A, Type of module: MOSFET transistor, On-state resistance: 10mΩ, Power dissipation: 390W, Drain-source voltage: 100V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM10DSKM09T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM10DSKM09T3G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Electrical mounting: Press-in PCB Case: SP3 Mechanical mounting: screw Semiconductor structure: diode/transistor Drain current: 100A Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper x2; NTC thermistor Pulsed drain current: 430A Type of module: MOSFET transistor On-state resistance: 10mΩ Power dissipation: 390W Drain-source voltage: 100V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM10DSKM09T3G | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 100V 139A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
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| APTM10DSKM09T3G | Hersteller : Microchip Technology |
Discrete Semiconductor Modules DOR CC3070 |
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| APTM10DSKM09T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 100V; 100A; SP3; Press-in PCB; Idm: 430A Electrical mounting: Press-in PCB Case: SP3 Mechanical mounting: screw Semiconductor structure: diode/transistor Drain current: 100A Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: buck chopper x2; NTC thermistor Pulsed drain current: 430A Type of module: MOSFET transistor On-state resistance: 10mΩ Power dissipation: 390W Drain-source voltage: 100V |
Produkt ist nicht verfügbar |