APTM10DUM02G

APTM10DUM02G Microchip Technology


11388051-aptm10dum02g-rev1-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 100V 495A 7-Pin Case SP-6 Tube
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Technische Details APTM10DUM02G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor,common source; 100V; 370A; SP6C, Type of module: MOSFET transistor, Semiconductor structure: common source; transistor/transistor, Drain-source voltage: 100V, Drain current: 370A, Case: SP6C, Topology: MOSFET x2, Electrical mounting: FASTON connectors; screw, On-state resistance: 2.5mΩ, Pulsed drain current: 1900A, Power dissipation: 1.25kW, Technology: POWER MOS 5®, Gate-source voltage: ±30V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

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APTM10DUM02G Hersteller : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 2.5mΩ
Pulsed drain current: 1900A
Power dissipation: 1.25kW
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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APTM10DUM02G Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 100V 495A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SP6
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APTM10DUM02G Hersteller : Microchip / Microsemi High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Discrete Semiconductor Modules DOR CC6143
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APTM10DUM02G Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Discrete Semiconductor Modules DOR CC6143
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APTM10DUM02G Hersteller : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor,common source; 100V; 370A; SP6C
Type of module: MOSFET transistor
Semiconductor structure: common source; transistor/transistor
Drain-source voltage: 100V
Drain current: 370A
Case: SP6C
Topology: MOSFET x2
Electrical mounting: FASTON connectors; screw
On-state resistance: 2.5mΩ
Pulsed drain current: 1900A
Power dissipation: 1.25kW
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar