APTM10HM09FT3G Microchip Technology
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Technische Details APTM10HM09FT3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Case: SP3F, Type of module: MOSFET transistor, Technology: FREDFET; POWER MOS 5®, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, Pulsed drain current: 430A, Semiconductor structure: transistor/transistor, Drain-source voltage: 100V, Drain current: 100A, On-state resistance: 10mΩ, Power dissipation: 390W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM10HM09FT3G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM10HM09FT3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 430A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Power dissipation: 390W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM10HM09FT3G | Hersteller : Microchip Technology | Description: MOSFET 4N-CH 100V 139A SP3 |
Produkt ist nicht verfügbar |
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APTM10HM09FT3G | Hersteller : Microchip / Microsemi | Discrete Semiconductor Modules CC3027 |
Produkt ist nicht verfügbar |
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APTM10HM09FT3G | Hersteller : Microchip Technology | Discrete Semiconductor Modules CC3027 |
Produkt ist nicht verfügbar |
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APTM10HM09FT3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 100A; SP3F; Press-in PCB Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 5® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 430A Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 100A On-state resistance: 10mΩ Power dissipation: 390W |
Produkt ist nicht verfügbar |