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APTM10SKM05TG

APTM10SKM05TG Microchip Technology


11428059-aptm10skm05tg-rev1-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 100V 278A 20-Pin Case SP-4 Tube
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Technische Details APTM10SKM05TG Microchip Technology

Description: MOSFET N-CH 100V 278A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 278A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: SP4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.

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APTM10SKM05TG Hersteller : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: buck chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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APTM10SKM05TG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 100V 278A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 700 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Produkt ist nicht verfügbar
APTM10SKM05TG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Discrete Semiconductor Modules PM-MOSFET-5-SP4
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APTM10SKM05TG Hersteller : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 100V; 207A; SP4; Idm: 1100A; 780W; screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 100V
Drain current: 207A
Case: SP4
Topology: buck chopper; NTC thermistor
Electrical mounting: FASTON connectors; screw
On-state resistance: 5mΩ
Pulsed drain current: 1100A
Power dissipation: 780W
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar