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APTM10TAM09FPG

APTM10TAM09FPG Microchip Technology


11438060-aptm10tam09fpg-rev1-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 100V 139A 21-Pin Case SP-6P Tube
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Technische Details APTM10TAM09FPG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Case: SP6P, Type of module: MOSFET transistor, Technology: FREDFET; POWER MOS 5®, Gate-source voltage: ±30V, Topology: MOSFET x3 half-bridge, Pulsed drain current: 430A, Semiconductor structure: transistor/transistor, Drain-source voltage: 100V, Drain current: 100A, On-state resistance: 10mΩ, Power dissipation: 390W, Anzahl je Verpackung: 1 Stücke.

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APTM10TAM09FPG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8060 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP6P
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTM10TAM09FPG APTM10TAM09FPG Hersteller : Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=8060 Description: MOSFET 6N-CH 100V 139A SP6-P
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APTM10TAM09FPG Hersteller : Microchip Technology index.php?option=com_docman&task=doc_download&gid=8060 Discrete Semiconductor Modules DOR CC6509
Produkt ist nicht verfügbar
APTM10TAM09FPG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=8060 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 100A; SP6P; Press-in PCB
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP6P
Type of module: MOSFET transistor
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 430A
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 10mΩ
Power dissipation: 390W
Produkt ist nicht verfügbar