APTM120H140FT1G Microchip Technology
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Technische Details APTM120H140FT1G Microchip Technology
Description: MOSFET 4N-CH 1200V 8A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 208W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V, Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SP1.
Weitere Produktangebote APTM120H140FT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM120H140FT1G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W Case: SP1 On-state resistance: 1.68Ω Power dissipation: 208W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 6A Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Drain-source voltage: 1.2kV Semiconductor structure: transistor/transistor Pulsed drain current: 50A Anzahl je Verpackung: 1 Stücke |
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APTM120H140FT1G | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 1200V 8A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP1 |
Produkt ist nicht verfügbar |
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| APTM120H140FT1G | Hersteller : Microchip Technology |
Discrete Semiconductor Modules DOR CC8014 |
Produkt ist nicht verfügbar |
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| APTM120H140FT1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W Case: SP1 On-state resistance: 1.68Ω Power dissipation: 208W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 6A Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Drain-source voltage: 1.2kV Semiconductor structure: transistor/transistor Pulsed drain current: 50A |
Produkt ist nicht verfügbar |