APTM120H29FG Microchip Technology

Description: MOSFET 4N-CH 1200V 34A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 780W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 34A, Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V, Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP6.