APTM120U10SAG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1.2kV; 86A; SP6C; Idm: 464A; 3.29kW; screw, Type of module: MOSFET transistor, Mechanical mounting: screw, Pulsed drain current: 464A, Semiconductor structure: diode/transistor, Drain-source voltage: 1.2kV, Drain current: 86A, On-state resistance: 0.12Ω, Power dissipation: 3.29kW, Electrical mounting: FASTON connectors; screw, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: single transistor + series diode - parrallel diode, Case: SP6C, Anzahl je Verpackung: 1 Stücke.