APTMC120AM20CT1AG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 108A; SP1; Press-in PCB; 600W, Power dissipation: 600W, Case: SP1, Semiconductor structure: SiC diode/transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: SiC, Topology: MOSFET half-bridge; NTC thermistor, Pulsed drain current: 280A, Drain-source voltage: 1.2kV, Drain current: 108A, On-state resistance: 17mΩ, Anzahl je Verpackung: 1 Stücke.