APTMC120AM25CT3AG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N-CH 1200V 105A SP3F
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 500W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V
Rds On (Max) @ Id, Vgs: 25mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V
Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ)
Supplier Device Package: SP3
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1096.24 EUR |
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Technische Details APTMC120AM25CT3AG Microchip Technology
Description: MOSFET 2N-CH 1200V 105A SP3F, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 500W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 113A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V, Rds On (Max) @ Id, Vgs: 25mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V, Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ), Supplier Device Package: SP3, Part Status: Active.
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Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 90A; SP3F; Press-in PCB; 600W Technology: SiC Power dissipation: 600W Semiconductor structure: SiC diode/transistor Case: SP3F Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 220A Drain-source voltage: 1.2kV Drain current: 90A On-state resistance: 25mΩ Anzahl je Verpackung: 1 Stücke |
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| APTMC120AM25CT3AG | Hersteller : Microchip / Microsemi |
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| APTMC120AM25CT3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 90A; SP3F; Press-in PCB; 600W Technology: SiC Power dissipation: 600W Semiconductor structure: SiC diode/transistor Case: SP3F Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 220A Drain-source voltage: 1.2kV Drain current: 90A On-state resistance: 25mΩ |
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